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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP&NPN Muti-Chip General Purpose Transistor VOLTAGE 50 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CH837UPNPT CURRENT 150 mAmperes FEATURE * Small surface mounting type. (SC-74/SOT-457 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP and NPN transistors in one package. (1) (6) 0.95 0.95 (3) (4) 0.25~0.5 1.4~1.8 SC-74/SOT-457 1.7~2.1 2.7~3.1 CONSTRUCTION * PNP and NPN transistors in one package. 0.08~0.2 0.3~0.6 C1 B2 5 E2 6 0.935~1.3 0~0.15 2.6~3.0 CIRCUIT 4 TR2 TR1 3 E1 2 B1 1 C2 Dimensions in millimeters SC-74/SOT-457 LIMITING VALUES of TR1( PNP Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-01 PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector - - - - - - - Tamb 25 C; note 1 - MIN. MAX. -50 -50 -50 -6 -150 -200 -30 200 +150 150 +150 V V V V UNIT mA mA mA mW C C C -55 - -55 RATING CHARACTERISTIC ( CH837UPNPT ) LIMITING VALUES of TR2( NPN Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 415 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector - - - - - - - T amb 25 C; note 1 - MIN. MAX. 50 50 50 7 150 200 30 200 +150 150 +150 V V V V UNIT mA mA mA mW C C C -55 - -55 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS of TR1( PNP Transistor ) Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE VCEsat Cc fT Note 1. Pulse test: tp 300 s; 0.02. 2. hFE: Y:120~240; G:200~400 PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCB = 50 V IC = 0; VCB = 50 V; TA = 125 OC IC = 0; VEB = - 6 V IC = -2.0 mA; VCE = -6.0V; note 1 IC = -100 mA ; IB = -10 mA IE = ie = 0; VCB = -10V; f = 1 MHz IC = -1mA; VCE = -10V ; f = 100 MHz - - - 120 - - - MIN. - - - - -200 4.0 120 TYP. MAX. -0.1 -50 -0.1 400 -400 5.0 - mV pF MHz UNIT uA uA uA RATING CHARACTERISTIC ( CH837UPNPT ) CHARACTERISTICS of TR2 ( NPN Transistor ) Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE VCEsat Cc fT Note 1. Pulse test: tp 300 s; 0.02. 2. hFE: Y:120~240; G:200~400 PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCB = -50 V IC = 0; VCB = -50 V; TA = 125 OC IC = 0; VEB = 6 V IC = 2.0 mA; VCE = 6.0V; note 1 IC = 100 mA ; I B = 10 mA IE = ie = 0; VCB = 10V ; f = 1 MHz IC = 1 mA; VCE = 10V ; f = 100 MHz - - - 120 - - - MIN. - - - - 100 2.0 150 TYP. MAX. 0.1 50 0.1 400 300 3.5 - mV pF MHz UNIT uA uA uA RATING CHARACTERISTIC CURVES ( CH837UPNPT ) CHARACTERISTIC CURVES of Tr1 ( PNP Transistor ) VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V 400 300 25 C 200 100 0 0.01 - 40 C 125 C Collector-Emitter Saturation Voltage vs Collector Current 0.3 0. 25 0.2 125 C 0. 15 0.1 0.0 5 0.1 25 C - 40 C 1 10 I C - COLLECTOR CURRENT (mA) 100 = 10 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) RATING CHARACTERISTIC CURVES ( CH837UPNPT ) VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT - BASE EM ITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.2 1 0.8 0.6 0.4 0.2 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 100 - 40 Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 V CE = 5.0 V = 10 C 25C 125C - 40 C 25 C 125C 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 400 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (uA) 100 VCB = 50V 10 100 Input and Output Capacitance vs Reverse Voltage f = 1.0 MHz CAPACITANCE (pF) 1 10 Cib Cob 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 125 1 0.1 1 10 V CE - COLLECTOR VOLTAGE (V) 100 CHARACTERISTIC CURVES of Tr2 ( NPN Transistor ) 600 500 400 300 200 100 0 0.01 0.03 25C - 40C 125C VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current V CE = 5.0 V Collector-Emitter Saturation Voltage vs Collector Current 0.3 = 10 0.25 0.2 0.15 0.1 25C 125 C 0.05 0 0.1 - 40C 100 0. 1 0.03 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 1 10 I C - COLLECTOR CURRENT (mA) RATING CHARACTERISTIC CURVES ( CH837UPNPT ) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) 1 - 40 C 0.8 0.6 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 25 C 125C = 10 VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 125C - 40 C 25 C 0.4 V CE = 5.0 V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 400 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (uA) 100 VCB = 50V 10 Input and Output Capacitance vs Reverse Voltage 100 f = 1.0 MHz 1 CAPACITANCE (pF) 10 Cib Co b 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 125 1 0.1 1 10 V CE - COLLECTOR VOLTAGE (V) 100 |
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